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this is information on a product in full production. july 2013 docid022287 rev 7 1/13 STP310N10F7 n-channel 100 v, 2.3 m typ., 180 a stripfet? vii deepgate? power mosfet in a to-220 package datasheet - production data figure 1. internal schematic diagram features ? ultra low on-resistance ? 100% avalanche tested applications ? switching applications description this device utilizes the 7 th generation of design rules of st?s proprietary stripfet? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. 1 2 3 tab to-220 $0y '7$% * 6 order code v ds r ds(on) max. i d STP310N10F7 100 v 2.7 m 180 a table 1. device summary order codes marking package packaging STP310N10F7 310n10f7 to-220 tube www.st.com
contents STP310N10F7 2/13 docid022287 rev 7 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid022287 rev 7 3/13 STP310N10F7 electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 100 v v gs gate-source voltage 20 v i d (1) 1. current limited by package. drain current (continuous) at t c = 25c 180 a i d (1) drain current (continuous) at t c =100c 120 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 720 a p tot total dissipation at t c = 25c 315 w derating factor 2.1 w/c e as (3) 3. starting t j =25c, i d =60 a, v dd =50 v single pulse avalanche energy (t j = 25 c, l=0.55 mh, i as =65 a ) 1j t j t stg operating junction temperature storage temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 0.48 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w
electrical characteristics STP310N10F7 4/13 docid022287 rev 7 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a 100 v i dss zero gate voltage drain current (v gs = 0) v ds = 100 v 1 a v ds = 100 v, t c = 125c 100 a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 3.5 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 60 a 2.3 2.7 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 12800 - pf c oss output capacitance - 3500 - pf c rss reverse transfer capacitance -170- pf q g total gate charge v dd = 50 v, i d = 180 a, v gs = 10 v (see figure 14 ) -180- nc q gs gate-source charge - 78 - nc q gd gate-source charge - 34 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 50 v, i d = 90 a r g =4.7 v gs = 10 v (see figure 13 , figure 18 ) -62-ns t r rise time - 108 - ns t d(off) turn-off delay time - 148 - ns t f fall time - 40 - ns
docid022287 rev 7 5/13 STP310N10F7 electrical characteristics 13 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 180 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) -720a v sd (2) 2. pulse duration = 300s, duty cycle 1.5% forward on voltage i sd =60 a, v gs =0 - 1.5 v t rr reverse recovery time i sd =180 a, di/dt = 100 a/s, v dd =80 v, tj=150c (see figure 15 ) -85 ns q rr reverse recovery charge - 200 nc i rrm reverse recovery current - 4.7 a
electrical characteristics STP310N10F7 6/13 docid022287 rev 7 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms tj=175c tc=25c sinlge pulse am14733v1 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/ tp single pulse =0.5 280tok 5v 6v 7v v gs =10v i d 150 100 50 0 0 4 v ds (v) 8 (a) 2 6 200 250 8v 300 am14734v1 i d 150 100 50 0 0 4 v gs (v) 8 (a) 2 6 200 250 v ds = 2v 300 350 13 5 7 am14735v1 v gs 6 4 2 0 0 q g (nc) (v) 100 8 50 10 v dd =50v i d =180a 150 am14736v1 r ds(on) 2.25 2.20 2.15 2.10 0 80 i d (a) (m ) 40 120 2.30 2.35 2.40 2.45 v gs =10v 160 am14737v1
docid022287 rev 7 7/13 STP310N10F7 electrical characteristics 13 figure 8. capacitance variations figure 9. source-drain diode forward characteristics figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized b vdss vs temperature c 6000 4000 2000 0 0 40 v ds (v) (pf) 20 8000 60 ciss coss crss 10000 14000 80 100 12000 am14738v1 t j =-50c t j =150c t j =25c v sd 0 40 i sd (a) (v) 160 80 120 0.45 0.55 0.65 0.75 0.85 0.95 1.05 am14739v1 v gs(th) 0.90 0.80 0.70 0.60 t j (c) (norm) 1.0 0 -25 75 25 -75 125 i d = 250a am14741v1 r ds(on) 1.6 1.2 0.8 0.4 0 t j (c) (norm) -25 75 25 -75 125 2.0 i d = 60a am14740v1 0 -25 75 25 -75 125 bv dss t j (c) (norm) 0.94 0.96 0.98 1.00 1.02 1.04 i d = 1ma am14742v1
test circuits STP310N10F7 8/13 docid022287 rev 7 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid022287 rev 7 9/13 STP310N10F7 package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STP310N10F7 10/13 docid022287 rev 7 table 8. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q2.65 2.95
docid022287 rev 7 11/13 STP310N10F7 package mechanical data 13 figure 19. to-220 type a drawing bw\sh$b5hyb7
revision history STP310N10F7 12/13 docid022287 rev 7 5 revision history table 9. document revision history date revision changes 19-oct-2011 1 initial version. 21-dec-2011 2 updated title and description in cover page. 06-mar-2012 3 updated i d value at t c = 25c in the whole document. table 5 , table 6 and table 7 have been updated with typical values. 20-aug-2012 4 document status promoted from preliminary to production data. added section 2.1: electrical characteristics (curves) . minor text changes. 31-oct-2012 5 ? added: h 2 pak-2 and h 2 pak-6 packages ? updated: section 4: package mechanical data and section 4: package mechanical data ? minor text changes 07-dec-2012 6 ? minor text changes ? the part numbers sth310n10f7-2, sth310n10f7-6 have been moved to a separate datasheet 31-jul-2013 7 ? modified: i dss and v gs(th) values in table 4 . ? minor text changes ? inserted: e as value in table 2
docid022287 rev 7 13/13 STP310N10F7 13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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